A solar-blind multi-quantum well (MQW) structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition (MOCVD). The monolithically integrated photonic chips including light-emitting diodes (LEDs), waveguides, and photodetectors (PDs) are presented. The results of the finite-difference time-domain (FDTD) simulation confirm the strong light constraint of the waveguide designed with the triangular structure in the optical coupling region. Furthermore, in virtue of predominant ultraviolet transverse magnetic (TM) modes, the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip. The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs. When the LEDs are operated at 100 mA current, the photo-to-dark current ratio (PDCR) of the integrated PD is about seven orders of magnitude. The responsivity, specific detectivity, and external quantum efficiency of the integrated self-driven PD are 74.89 A/W, 4.22×10¹³ Jones, and 3.38×10⁴%, respectively. The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.