Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications

doi:10.12142/ZTECOM.202404002

ZTE Communications ›› 2024, Vol. 22 ›› Issue (4): 3-8.DOI: 10.12142/ZTECOM.202404002

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Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications

HE Rui¹^,², HU Qiang¹^,², RAN Junxue¹^,², WANG Junxi¹^,², WEI Tongbo¹^,²()

^1.Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
^2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2024-09-11 Online:2024-12-03 Published:2024-12-03
About author:HE Rui is now pursuing her PhD degree in the Institute of Semiconductors, Chinese Academy of Sciences. She received her BS degree in applied physics from University of Science and Technology Beijing, China. Her research mainly focuses on the research of optoelectronic integrated devices based on wide bandgap semiconductor materials.
HU Qiang is currently an associate professor in Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences. His research interests focus on wide gap semiconductor MOCVD epitaxy and power devices.
RAN Junxue received his PhD degree from Institute of Semiconductors, Chinese Academy of Sciences in 2006. He is currently an associate professor in Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences. His research interests focus on wide gap semiconductor MOCVD epitaxy and power devices.
WANG Junxi is currently a professor in materials physics and chemistry, Institute of Semiconductors, Chinese Academy of Sciences. He received his bachelor’s degree in physics from Northwestern University, China in 1998, and his doctoral degree in engineering from Institute of Semiconductors, Chinese Academy of Sciences in 2003. His research interests focus on wide gap semiconductor material epitaxy, deep ultraviolet light-emitting diode (DUV-LED) devices, advanced semiconductor materials, and their applications.
WEI Tongbo (tbwei@semi.ac.cn) is currently a professor in materials physics and chemistry, Institute of Semiconductors, Chinese Academy of Sciences. He received his doctoral degree in engineering from the Institute of Semiconductors, Chinese Academy of Sciences in July 2007. His research interests focus on wide bandgap semiconductor materials and devices, new micronano photoelectronic devices, deep ultraviolet light emitting devices, and nitride growth on two-dimensional materials.
Supported by:
the Key Field R&D Program of Guangdong Province(2021B0101300001);the National Key R&D Program of China(2022YFB3605003);the National Natural Science Foundation of China(52192614);Beijing Natural Science Foundation(4222077);Beijing Science and Technology Plan(Z221100002722019);Guangdong Basic and Applied Basic Research Foundation(2022B1515120081)

Abstract

Abstract:

A solar-blind multi-quantum well (MQW) structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition (MOCVD). The monolithically integrated photonic chips including light-emitting diodes (LEDs), waveguides, and photodetectors (PDs) are presented. The results of the finite-difference time-domain (FDTD) simulation confirm the strong light constraint of the waveguide designed with the triangular structure in the optical coupling region. Furthermore, in virtue of predominant ultraviolet transverse magnetic (TM) modes, the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip. The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs. When the LEDs are operated at 100 mA current, the photo-to-dark current ratio (PDCR) of the integrated PD is about seven orders of magnitude. The responsivity, specific detectivity, and external quantum efficiency of the integrated self-driven PD are 74.89 A/W, 4.22×10¹³ Jones, and 3.38×10⁴%, respectively. The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.

Key words: monolithically integration, photonic chips, UVC, solar-blind communication

HE Rui, HU Qiang, RAN Junxue, WANG Junxi, WEI Tongbo. Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications[J]. ZTE Communications, 2024, 22(4): 3-8.

Figures/Tables 5

References 21

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Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications

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