ZTE Communications ›› 2021, Vol. 19 ›› Issue (2): 77-81.DOI: 10.12142/ZTECOM.202102010

• Research Paper • Previous Articles     Next Articles

A Novel De-Embedding Technique of Packaged GaN Transistors

WEI Xinghui(), CHEN Xiaofan, CHEN Wenhua, ZHOU Junmin   

  1. Tsinghua University, Beijing 100084, China
  • Received:2020-03-04 Online:2021-06-25 Published:2021-07-27
  • About author:WEI Xinghui (784999315@qq.com) received the B.S. degree in electronic information engineering from Xidian University, China in 2017, and the M.Sc. Degree in electronics and communication engineering from Tsinghua University, China in 2020. Her research interests include the technologies of high efficiency and high linearity Doherty power amplifiers.|CHEN Xiaofan received the B.S., M.Sc., and Ph.D. degrees in electronic engineering from Tsinghua University, China in 2005, 2014, and 2017, respectively. From 2005 to 2011, he was a microwave engineer with Tongfang Co., Ltd., China, where he was also with the Broadcasting Transmitters Group and designed high-power amplifiers. He is currently a Post-Doctoral Fellow with the Department of Electronic Engineering, Tsinghua University. His current interests include broadband/dual-band RF power amplifier (PA) design, linearization of RF PAs, and multimode/multiband transmitting systems.|ZHOU Junmin received the B.S. degree in College of Optoelectronic Engineering from Chongqing University, China. His current research interests include broadband high-efficiency RF power amplifier design, and research on integrated passive device.


This paper presents a novel de-embedding technique of packaged high-power transistors. With the proposed technique, the packaged model of the power amplifier (PA) tube can be divided into the frequency independent de-embedded intrinsic device (DID) and the frequency dependent internal parasitic network (IPN), which is of great help in reducing the design complexity of a broadband PA. Different from the conventional technique of parasitic extraction, the proposed technique only requires external measurements. The frequency independent characteristic of DID is verified and the IPN is modeled and calibrated for a 50 W gallium-nitride (GaN) transistor. At last, a broadband Doherty PA is fabricated with the de-embedding technique. According to the measured results, the PA exhibits satisfactory power and efficiency performance.

Key words: de-embedding, power amplifier, intrinsic device, parasitic network