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ZTE Communications ›› 2024, Vol. 22 ›› Issue (4): 40-45.DOI: 10.12142/ZTECOM.202404006

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Monolithically Integrating a 180° Bent Waveguide into a III-Nitride Optoelectronic On-Chip System

ZHANG Hao, YE Ziqi, YUAN Jialei, LIU Pengzhan, WANG Yongjin()   

  1. GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • Received:2024-08-04 Online:2024-12-03 Published:2024-12-03
  • About author:ZHANG Hao received his BS degree in automation from Nanjing Institute of Technology, China and MS degree in electronics and communication engineering from Nanjing University of Posts and Telecommunications, China in 2016 and 2019, respectively. In 2019, he won the Grand Prize of the “Challenge Cup” National College Students’ Extracurricular Academic Works Competition. He is pursuing his PhD degree in signal and information processing at Nanjing University of Posts and Telecommunications. His research interests focus on GaN optoelectronics integration and applications. In the last three years, he has published three research papers as the first author, and his research work has been featured on Semiconductor Today and selected as an OSA Editor’s Pick.
    YE Ziqi received her BS and MS degrees in communication engineering from Nanjing University of Posts and Telecommunications, China in 2019 and 2022, where she is currently pursuing her PhD degree in communication and information system. Her current research interests include monolithic integration GaN LED and visible light communications.
    YUAN Jialei received his MS degree in communication engineering from Nan⁃jing University of Posts and Telecommunications, China in 2018, where he is currently pursuing his PhD degree in communication and information system. His current research interests
    LIU Pengzhan received his MS degree from Nanjing university of posts and telecommunications, China. Now he is a PhD student there under the supervision of Prof. CAO Ziping and WANG Yongjin. He is mainly engaged in the research of all light wireless optical communication networks and integrated GaN optoelectronic devices.
    WANG Yongjin ( wangyj@njupt.edu.cn) received his PhD degree in microelectronics and solid state electronics from Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2005. He received plenty of scholarships including the Humboldt Foundation Scholarship, the JSPS Special Researcher Scholarship, and the Royal Society for Engineering Scholarship. In addition, he was engaged in the research work at the University of Freiburg, Germany, Tohoku University, Japan, Germany Forschungszentrum Jülich, and University of Bristol, UK. Since 2011, he has been a professor at Nanjing University of Posts and Telecommunications, China. Now, he is the chief investigator of National Micro-Nano Devices and the Information System Innovation Introduction Base. His current research is to conduct III-nitride monolithic photonic circuits and all light wireless optical communication Networks. He has published more than 100 research papers in this field.
  • Supported by:
    the National Natural Science Foundation of China(U21A20495);National Key Research and Development Program of China(2022YFE0112000);Higher Education Discipline Innovation Project(D17018)

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Abstract:

GaN-based devices have developed significantly in recent years due to their promising applications and research potential. A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption. This miniaturized integration not only enhances multifunctional performance but also reduces material, processing, and packaging costs. In this study, we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer. The system includes a near-ultraviolet light source, a monitor, a 180° bent waveguide, an electro-absorption modulator, and a receiver, all integrated without the need for regrowth or post-growth doping. 35 Mbit/s optical data communication is demonstrated through light propagation within the system, confirming its potential for compact GaN-based optoelectronic solutions.

Key words: optoelectronic integration, bent waveguide, on-chip system, III-nitride-on-Si