An Improved Parasitic Parameter Extraction Method for InP HEMT

doi:10.12142/ZTECOM.2022S1001

ZTE Communications ›› 2022, Vol. 20 ›› Issue (S1): 1-6.DOI: 10.12142/ZTECOM.2022S1001

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An Improved Parasitic Parameter Extraction Method for InP HEMT

DUAN Lanyan¹, LU Hongliang²(), QI Junjun², ZHANG Yuming², ZHANG Yimen²

^1.ZTE Corporation, Shenzhen 518057, China
^2.Key Laboratory of Wide Band?Gap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China

Online:2022-01-25 Published:2022-03-01
About author:DUAN Lanyan received the M.S degree in circuit and system from Hunan University, China in 2002. She joined ZTE Corporation in 2002. Now, she is a senior technology and quality engineer in ZTE Corporation. Her main research direction is the development of RF material.|LU Hongliang (hllv@mail.xidian.edu.cn) received the M.S. and Ph.D. degrees in microelectronics engineering from Xidian University, China in 2003 and 2007, respectively. Since 2010, she has been a professor with the School of Microelectronics, Xidian University. Her current research interests include modeling and experiments on SiC MESFET and other devices.|Qi Junjun is currently pursuing the Ph.D. degree at the School of Microelectronics, Xidian University, China. Her current research interests include model analysis and extraction of small signal equivalent parameters.|ZHANG Yuming received the M.S. degree from Xidian University, China in 1992, and the Ph.D. degree from Xi’an Jiaotong University, China in 1998. Since 2001, he has been a professor with the Microelectronics Institute, Xidian University. His current research interests include design, modeling, fabrication, and electrical characterization of SiC electronic devices for high-temperature and high-power operation. He is a senior member of IEEE.|ZHANG Yimen is a professor with the School of Microelectronics, Xidian University, China. He has also been a visiting scholar with Arizona State University, USA and a senior visiting scholar with Yale University, USA. His current research interests include wideband semiconductor devices, semiconductor devices modeling, TCAD for VLSI, and quantum well devices.
Supported by:
ZTE Industry-University-Institute Cooperation Funds(HC-CN-20191121016)

Abstract

Abstract:

An improved parasitic parameter extraction method for InP high electron mobility transistor (HEMT) is presented. Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal parameter extraction. It is necessary to accurately determine and effectively eliminate the parasitic effect, so as to avoid the error propagation to the internal circuit parameters. In this paper, in order to obtain higher accuracy of parasitic parameters, parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters. The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-parameters up to 40 GHz for InP HEMT. In 0.1–40 GHz InP HEMT, the average relative error of the optimization algorithm is about 9% higher than that of the analysis method, which verifies the validity of the parasitic parameter extraction method. The extraction of parasitic parameters not only provides a foundation for the high-precision extraction of small signal intrinsic parameters of HEMT devices, but also lays a foundation for the high-precision extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.

Key words: parasitic parameters, open-short test structure, parameter extraction, HEMT

DUAN Lanyan, LU Hongliang, QI Junjun, ZHANG Yuming, ZHANG Yimen. An Improved Parasitic Parameter Extraction Method for InP HEMT[J]. ZTE Communications, 2022, 20(S1): 1-6.

Figures/Tables 11

Figure 1 Photograph of InP high electron mobility transistor (HEMT) device structure

Figure 2 Small signal equivalent circuit for InP high electron mobility transistors (HEMT)

Figure 3 Parasitic parameter extraction process

Figure 4 Equivalent circuit of the open dummy structure

Table 1 Extraction of parasitic capacitance values

C_pg/fF	C_pgd/fF	C_pd/fF
21.497	1.647	20.407

Figure 5 Equivalent circuit of the dummy short structure

Table 2 Extraction of parasitic inductance and resistance values

Parasitic Parameter	Value
L_g/pH	35.355
L_s/pH	3.200
L_d/pH	41.599
R_g/Ω	0.600
R_s/Ω	0.050
R_d/Ω	1.000

Figure 6 Comparison of parasitic parameters extracted by the dummy short structure and measurement data

Table 3 Extraction of extrinsic inductances and resistances

Extrinsic Parameter	Value
L_g/pH	39.467
L_s/pH	5.076
L_d/pH	47.676
R_g/Ω	0.725
R_s/Ω	0.034
R_d/Ω	0.639

Figure 7 Comparison of extracted parasitic parameters by dummy short structure and measurement data

Figure 8 S-parameters fitting errors of the improved extracted method

References 11

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An Improved Parasitic Parameter Extraction Method for InP HEMT

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