ZTE Communications ›› 2017, Vol. 15 ›› Issue (3): 46-51.doi: 10.3969/j.issn.1673-5188.2017.03.006
• Research Paper • Previous Articles Next Articles
ZHONG Fang1, GONG Pan1, ZHOU Zhiping1, HUA Feng2, WANG Huitao2
Received:2016-12-12
Online:2017-08-25
Published:2019-12-24
About author:ZHONG Fang (fzhong@pku.edu.cn) received the B.E. degree in materials engineering from Peking University, China in 2015. Since 2015, he has been working for his master degree at the State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, China. His current research interests include silicon based modulators and monolithic integration of high speed transmitters for optical communication systems.|GONG Pan (pankung@pku.edu.cn) received the B.E. degree in electronic from Hebei University of Engineering, China in 2012. He has obtained his master degree from the School of Software and Microelectronics, Peking University, China. His research interests include silicon-based Germanium photodetectors and monolithic integration of high speed coherent receivers for optical communication systems.|ZHOU Zhiping (zjzhou@pku.edu.cn) received the Ph.D. degree in electrical engineering from Georgia Institute of Technology (GT), USA in 1993. From 1993 to 2005, he was with the Microelectronics Research Center at GT, where he engaged research and development in the areas of nanotechnology, integrated optoelectronics, nanophotonic devices, and semiconductor devices. He is currently a Changjiang Professor at Peking University, China, focusing on silicon photonics and microsystems research. He has been credited for more than 360 technical papers and presentations, and 15 patents. He was the Chair of IEEE Wuhan Section, 2007-2008, the Director of IEEE Atlanta Section, 2001-2003. He also chaired, cochaired, and served on many program committees for various conferences for OSA, IEEE Photonics Society, and SPIE. Dr. Zhou is a Fellow of OSA, SPIE, and IET, and a Life Member of PSC. He serves as the Editor-in-Chief of Photonics Research and is on OSA Board of Editors.|HUA Feng (hua.feng@zte.com.cn) received her master degree in optical instrument from Tianjin University, China in 1996. She has worked with ZTE Corporation since 2000. Currently she is a senior engineer focusing on advanced research of cutting-edge optical communication technologies include silicon photonics, SDM, and optical backplane. She has more than 10 patents.|WANG Huitao (wang.huitao@zte.com.cn) received the B.E. degree in electronic science and technology from Harbin Engineering University, China in 2000 and the M.S. degree in physical electronics from Beijing Insititute of Technology, China in 2003. He worked at ZTE Corporation from 2003 to 2017 and was responsible for the technical planning of optical network system and optoelectronics devices. He has been working with ZTE Photonics since 2017, and is committed to the research and planning of high-speed optoelectronic devices in optical communications.
Supported by:ZHONG Fang, GONG Pan, ZHOU Zhiping, HUA Feng, WANG Huitao. High Performance Optical Modulator and Detector for 100 Gb/s Transmission System[J]. ZTE Communications, 2017, 15(3): 46-51.
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Figure 1.
The cross-section diagram of U-type PN junction."
Figure 2.
The curves of modulation efficiency of a) W2 and b) H 2."
Figure 3.
a) The insertion loss vs. the length of the modulation arm; b) the extinction ratio vs. the optical intensity ratio of one modulation arm."
Figure 4.
The curves of S21 vs. a) W and b) G."
Figure 5.
The curves of a) S21 and b) S11 of the designed electrode."
Figure 6.
TE fundamental mode."
Figure 7.
a) The schematic structure and b) the cross-sectional image of the designed Ge photodetector."
Figure 8.
Normalization light absorption vs. the length of Ge characteristic."
Figure 9.
Dark current of the designed Ge photo detector at different reverse biases."
Figure 10.
Spectral responsivity of the designed Ge photo detector."
Figure 11.
3 dB bandwidth of the designed Ge photo detector (Line 1) -3 V (Line 2)."
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