ZTE Communications ›› 2017, Vol. 15 ›› Issue (3): 46-51.DOI: 10.3969/j.issn.1673-5188.2017.03.006
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收稿日期:2016-12-12出版日期:2017-08-25发布日期:2019-12-24
High Performance Optical Modulator and Detector for 100 Gb/s Transmission System
ZHONG Fang1, GONG Pan1, ZHOU Zhiping1, HUA Feng2, WANG Huitao2
- 1. State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
2. Wireline Product Operation, ZTE Corporation, Beijing 100191, China
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Received:2016-12-12Online:2017-08-25Published:2019-12-24 -
About author:ZHONG Fang (fzhong@pku.edu.cn) received the B.E. degree in materials engineering from Peking University, China in 2015. Since 2015, he has been working for his master degree at the State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, China. His current research interests include silicon based modulators and monolithic integration of high speed transmitters for optical communication systems.|GONG Pan (pankung@pku.edu.cn) received the B.E. degree in electronic from Hebei University of Engineering, China in 2012. He has obtained his master degree from the School of Software and Microelectronics, Peking University, China. His research interests include silicon-based Germanium photodetectors and monolithic integration of high speed coherent receivers for optical communication systems.|ZHOU Zhiping (zjzhou@pku.edu.cn) received the Ph.D. degree in electrical engineering from Georgia Institute of Technology (GT), USA in 1993. From 1993 to 2005, he was with the Microelectronics Research Center at GT, where he engaged research and development in the areas of nanotechnology, integrated optoelectronics, nanophotonic devices, and semiconductor devices. He is currently a Changjiang Professor at Peking University, China, focusing on silicon photonics and microsystems research. He has been credited for more than 360 technical papers and presentations, and 15 patents. He was the Chair of IEEE Wuhan Section, 2007-2008, the Director of IEEE Atlanta Section, 2001-2003. He also chaired, cochaired, and served on many program committees for various conferences for OSA, IEEE Photonics Society, and SPIE. Dr. Zhou is a Fellow of OSA, SPIE, and IET, and a Life Member of PSC. He serves as the Editor-in-Chief of Photonics Research and is on OSA Board of Editors.|HUA Feng (hua.feng@zte.com.cn) received her master degree in optical instrument from Tianjin University, China in 1996. She has worked with ZTE Corporation since 2000. Currently she is a senior engineer focusing on advanced research of cutting-edge optical communication technologies include silicon photonics, SDM, and optical backplane. She has more than 10 patents.|WANG Huitao (wang.huitao@zte.com.cn) received the B.E. degree in electronic science and technology from Harbin Engineering University, China in 2000 and the M.S. degree in physical electronics from Beijing Insititute of Technology, China in 2003. He worked at ZTE Corporation from 2003 to 2017 and was responsible for the technical planning of optical network system and optoelectronics devices. He has been working with ZTE Photonics since 2017, and is committed to the research and planning of high-speed optoelectronic devices in optical communications. -
Supported by:This work is partially supported by ZTE Industry-Academia-Research Cooperation Funds
引用本文
. [J]. ZTE Communications, 2017, 15(3): 46-51.
ZHONG Fang, GONG Pan, ZHOU Zhiping, HUA Feng, WANG Huitao. High Performance Optical Modulator and Detector for 100 Gb/s Transmission System[J]. ZTE Communications, 2017, 15(3): 46-51.
Figure 1. The cross-section diagram of U-type PN junction.
Figure 1. The cross-section diagram of U-type PN junction.
Figure 2. The curves of modulation efficiency of a) W2 and b) H 2.
Figure 2. The curves of modulation efficiency of a) W2 and b) H 2.
Figure 3. a) The insertion loss vs. the length of the modulation arm; b) the extinction ratio vs. the optical intensity ratio of one modulation arm.
Figure 3. a) The insertion loss vs. the length of the modulation arm; b) the extinction ratio vs. the optical intensity ratio of one modulation arm.
Figure 4. The curves of S21 vs. a) W and b) G.
Figure 4. The curves of S21 vs. a) W and b) G.
Figure 5. The curves of a) S21 and b) S11 of the designed electrode.
Figure 5. The curves of a) S21 and b) S11 of the designed electrode.
Figure 6. TE fundamental mode.
Figure 6. TE fundamental mode.
Figure 7. a) The schematic structure and b) the cross-sectional image of the designed Ge photodetector.
Figure 7. a) The schematic structure and b) the cross-sectional image of the designed Ge photodetector.
Figure 8. Normalization light absorption vs. the length of Ge characteristic.
Figure 8. Normalization light absorption vs. the length of Ge characteristic.
Figure 9. Dark current of the designed Ge photo detector at different reverse biases.
Figure 9. Dark current of the designed Ge photo detector at different reverse biases.
Figure 10. Spectral responsivity of the designed Ge photo detector.
Figure 10. Spectral responsivity of the designed Ge photo detector.
Figure 11. 3 dB bandwidth of the designed Ge photo detector (Line 1) -3 V (Line 2).
Figure 11. 3 dB bandwidth of the designed Ge photo detector (Line 1) -3 V (Line 2).
| [1] |
D. A. B. Miller , “Device requirements for optical interconnects to silicon chips,” Proc. IEEE, vol. 97, no. 7, pp. 1166-1185, Jul. 2009. doi: 10.1109/JPROC. 2009.2014298.
DOI URL |
| [2] |
D. Ahn, C. Hong, J. Liu , et al., “High performance, waveguide integrated Ge photo detectors,” Optics Express, vol. 15, no 7, pp. 3916-3921, 2007. doi: 10.1364/OE.15.003916.
DOI URL PMID |
| [3] |
Q. Xu, B. Schmidt, S. Pradhan, M. Lipson , “Micrometre-scale silicon electro-optic modulator,” Nature, vol. 435, no. 7040, pp. 325-327, 2005. doi: 10.1038/nature03569.
DOI URL PMID |
| [4] |
B. Jalali and S. Fathpour , “Silicon photonics,” Journal of Lightwave Technology, vol. 24, no. 12, pp. 4600-4615, 2006. doi: 10.1109/JLT.2006.885782.
DOI URL |
| [5] |
G. T. Reed, G. Mashanovich, F. Y. Gardes, D. J. Thomson , “Silicon optical modulators,” Nature Photonics, vol. 4, no. 8, pp. 518-526, Jul. 2010. doi: 10.1038/nphoton.2010.179.
DOI URL |
| [6] |
A. E. J. Lim, J. Song, F. Qing, C. Li , et al., “Review of silicon photonics foundry efforts,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, no. 4, pp. 405-416, 2014. doi: 10.1109/JSTQE.2013.2293274.
DOI URL |
| [7] | A. R. Chralyvy , “The coming capacity crunch,” in 35th European Conference on Optical Communication, Vienna, Austria, 2009. |
| [8] |
R. W. Tkach , “Scaling optical communications for the next decade and beyond,” Bell Labs Technical Journal, vol. 14, pp. 3-10, 2010. doi: 10.1002/bltj.20400.
DOI URL |
| [9] | A. D. Ellis, F. C. G. Gunning, B. Cuenot, T. C. Healy and E. Pincemin , “Towards 1TbE using coherent WDM,” in Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology, Sydney, Australia, 2008. doi: 10.1109/OECCACOFT.2008.4610550. |
| [10] |
P. J. Winzer and R. Essiambre , “Advanced optical modulation formats,” Proceedings of the IEEE, vol. 94, no. 5, pp. 952-985, May 2006. doi: 10.1109/JPROC.2006.873438.
DOI URL |
| [11] |
K. Kikuchi , “Digital coherent optical communication systems: fundamentals and future prospect,” IEICE Electron. Express, vol. 8, no. 20, pp. 1642-1662, 2011. doi: 10.1587/elex.8.1642.
DOI URL |
| [12] |
H. Yi, Q. Long, W. Tan , et al., “Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission,” Optics. Express, vol. 20, no. 25, pp. 27562-27568, 2012. doi: 10.1364/OE.20.027562.
DOI URL |
| [13] |
T. Li, J. Zhang, H. Yi , et al., “Low-voltage, high speed, compact silicon modulator for BPSK modulation,” Optics. Express, vol. 21, no. 20, pp. 23410-23415, 2013. doi: 10.1364/OE.21.023410.
DOI URL |
| [14] | T. Li, J. Zhang, H. Yi , et al., “10-Gb/s 53.1-km BPSK transmission of silicon Mach-Zehnder modulator,” in Asia Communications and Photonics Conference, Beijing, China, 2013. doi: 10.1364/ACPC.2013.AW4A.3. |
| [15] |
T. Li, D. Wang, J. Zhang , et al., “Demonstration of 6.25 Gbaud advanced modulation formats with subcarrier multiplexed technique on silicon Mach-Zehnder modulator,” Optics Express, vol. 22, no. 16, pp. 19818-19823, 2014. doi: 10.1364/OE.22.019818.
DOI URL PMID |
| [16] | M. Cignoli, G. Minoia, M. Repossi , et al., “22.9 A 1310 nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275 mW multistage CMOS driver achieving 6 dB extinction ratio at 25 Gb/s,” in IEEE International Solid-State Circuits Conference, San Francisco, USA, 2015. doi: 10.1109/ISSCC.2015.7063103. |
| [17] | M. Nedeljkovic, R. A. Soref, G. Z. Mashanovich , “Free-carrier electro-absorption and electro-refraction modulation in group IV materials at mid-infrared wavelengths,” in Proc. SPIE 8266 of Silicon Photonics VII, San Francisco, USA, 2012. doi: 10.1117/12.908650. |
| [18] |
J. F. Liu, D. Pan, S. Jongthammanurak , et al., “Design of monolithically integrated GeSi electro-absorption modulators and photo detectors on a SOI platform,” Optics Express, vol. 15, no. 2, pp. 623-628, 2007. doi: 10.1364/OE.15.000623.
DOI URL PMID |
| [19] | G. T. Reed and A. P. Knights , Silicon Photonics: An Introduction. Chichester, England: John Wiley & Sons, 2004. doi: 10.1002/0470014180. |
| [20] |
C. T. DeRose, D. C. Trotter, W. A. Zortman , et al., “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Optics Express, vol. 19, no. 25, pp. 24897-24904, 2011. doi: 10.1364/OE.19.024897.
DOI URL PMID |
| [21] |
L. Vivien, A. Polzer, D. M. Morini , et al., “Zero-bias 40 Gbit/s germanium waveguide photo detector on silicon,” Optics Express, vol. 20, no. 2, pp. 1096-1101, 2012. doi: 10.1364/OE.20.001096.
DOI URL |
| [22] |
L. P. Virot, L. Vivien, J. M. Fedeli , et al., “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photon. Research, vol. 1, no. 3, pp. 140-147, 2013. doi: 10.1364/PRJ.1. 000140.
DOI URL |
| [23] | Z. Tu, K. Liu, H. Yi , et al., “A Compact Evanescently-coupled Germanium PIN Waveguide Photo detector,” in Proc. SPIE 8564 of Nanophotonics and Micro/Nano Optics, Beijing, China, 2012. doi: 10.1117/12.2001221. |
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