Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD

doi:10.12142/ZTECOM.202404007

ZTE Communications ›› 2024, Vol. 22 ›› Issue (4): 46-52.DOI: 10.12142/ZTECOM.202404007

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收稿日期:2024-11-07 出版日期:2024-12-20 发布日期:2024-12-03

Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD

LU Meixin, JIANG Zitong, FANG Li, YAN Yiqun, YAN Jiabin()

Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Received:2024-11-07 Online:2024-12-20 Published:2024-12-03
About author:LU Meixin is an undergraduate at the School of Communication and Information Engineering, Nanjing University of Posts and Telecommunications, China. Her research focuses on sensors, GaN-based optoelectronic devices, and visible light communications systems.
JIANG Zitong is an undergraduate at the School of Communication and Information Engineering, Nanjing University of Posts and Telecommunications, China. Her research focuses on quantum sensing technology, strong magnetic field measurement, and visible light communications systems.
FANG Li received his BS degree in electronic information engineering from Qingdao University of Technology, China in 2022. He is currently pursuing an MS degree in electronic information with the Nanjing University of Posts and Telecommunications, China. His current research interests include GaN-based optoelectronic devices, optoelectronic integrated circuit (OEIC), thermoelectric/photoelectric energy harvesters, and RF MEMS devices.
YAN Yiqun received her BS degree in communication engineering from Qingdao University of Technology, China in 2023. She is currently pursuing an MS degree in electronic information with the Nanjing University of Posts and Telecommunications, China. Her current research interests include GaN-based optoelectronic devices, acoustic sensors, and photoelectric energy harvesters.
YAN Jiabin (jbyan@njupt.edu.cn) received his BS degree in microelectronics from Shanghai University, China and PhD degree in microelectronics and solid state electronics from Southeast University, China in 2013 and 2018, respectively. He is currently an associate professor with the Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, China. The discipline of his research focuses on GaN-based optoelectronic devices, optoelectronic integrated circuit (OEIC), thermoelectric/photoelectric energy harvesters, and RF MEMS devices.
Supported by:
the National Natural Science Foundation of China(62004103);the Natural Science Foundation of Jiangsu Province(BK20200743);the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province(22KJA510003);the Natural Science Foundation of Nanjing University of Posts and Telecommunications(NY223084);the “111” project(D17018);the Postgraduate Research & Practice Innovation Program of Jiangsu Province(SJCX230257)

摘要/Abstract

Abstract:

While considerable research has been conducted on the structural principles, fabrication techniques, and photoelectric properties of high-voltage light-emitting diodes (LEDs), their performance in light communication remains underexplored. A high-voltage series-connected LED or photodetector (HVS-LED/PD) based on the gallium nitride (GaN) integrated photoelectronic chip is presented in this paper. Multi-quantum wells (MQW) diodes with identical structures are integrated onto a single chip through wafer-scale micro-fabrication techniques and connected in series to construct the HVS-LED/PD. The advantages of the HVS-LED/PD in communication are explored by testing its performance as both a light transmitter and a PD. The series connection enhances the device's 3 dB bandwidth, allowing it to increase from 1.56 MHz to a minimum of 2.16 MHz when functioning as an LED, and from 47.42 kHz to at least 85.83 kHz when operating as a PD. The results demonstrate that the light communication performance of HVS-LED/PD is better than that of a single GaN MQW diode with bandwidth and transmission quantity, which enriches the research of GaN-based high-voltage devices.

Key words: high-voltage LEDs, high-voltage PDs, GaN MQW diode array, communication characterization, visible light communication

. [J]. ZTE Communications, 2024, 22(4): 46-52.

LU Meixin, JIANG Zitong, FANG Li, YAN Yiqun, YAN Jiabin. Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD[J]. ZTE Communications, 2024, 22(4): 46-52.

图/表 4

参考文献 27

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Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD

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